IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor designed to switch high voltage and current in power electronics. It combines the high input impedance and fast switching of a MOSFET with the high current capability of a bipolar transistor, enabling efficient power conversion. Key benefits - High efficiency due to low conduction losses and fast switching performance - Simple gate drive with relatively low input current - Robust current and voltage handling for demanding power circuits - Available in discrete devices or power modules for flexible cooling and integration Function and drive - Acts as a fast, high-side or low-side switch in inverters, motor drives, power supplies, and similar circuits - Gate-driven control with PWM signals to regulate output, speed, or torque - Designed for reliable operation under switching loads, with appropriate thermal management Compatibility and integration - Compatible with standard gate-drive circuits and control logic - Requires proper voltage and current ratings to match the application - Thermal management and heatsinking are important for maintaining performance Size, material, and packaging - Silicon-based device available in discrete formats or integrated power modules - Offered in multiple package styles to suit cooling and space constraints - Typically used with suitable heatsinks or thermal interfaces to manage heat Performance notes - Suitable for applications with high dv/dt and transient loads - Performance depends on model ratings; select according to voltage, current, and switching frequency requirements Use scenarios - 3-phase motor drive systems in industrial automation and HVAC - DC-AC inverter or DC-DC converter in solar, wind, or UPS power systems - Welding or induction heating power supplies requiring reliable high-current switching